发明名称 SYSTEM AND METHOD FOR HEAT TREATING SEMICONDUCTOR
摘要 <p>A system for heat treating a semiconductor having a supply system comprising a combustor (12), a heater (13) and a gas distributing section (14). The combustor (12) has a combustion chamber (59) disposed on the outside of a treating chamber (21). The combustor (12) produces steam by causing reaction of hydrogen gas and oxygen gas in the combustion chamber (59) and supplies steam to the treating chamber (21). The heater (13) has a heating chamber (61) disposed on the outside of the treating chamber (21). The heater (13) heats up gas not passing through the combustion chamber (59) selectively to the activation point or above in the heating chamber (61) before supplying it to the treating chamber (21). The gas distributing section (14) supplies hydrogen gas and oxygen gas selectively to the combustion chamber (59) and supplies a reactive gas and an inert gas selectively to the heating chamber (61).</p>
申请公布号 WO2002091447(P1) 申请公布日期 2002.11.14
申请号 JP2002002327 申请日期 2002.03.13
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