发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor module which optimizes a solder bonding thickness and improves the reliability of a joint structure so as to solder a semiconductor device and bus bars. SOLUTION: The power semiconductor module is equipped with: a semiconductor package 1A which consists of a power semiconductor element 5, a primary electrode plate 6 and a secondary electrode plate 7; a first bus bar 2a which is a conductive member soldered and bonded to a principal plane of the primary electrode 6 through a first solder member h; a second bus bar 2b which is a conductive member soldered and bonded to a principal plane of the secondary electrode plate 7 through a second solder member; and soldering control sections S1 which are respectively provided in the principal plane to which the primary electrode plate 6 in the first bus bar 2a is soldered, and in the principal plane to which the secondary electrode plate 7 in the second bus bar 2b is soldered, so as to regulate the solder bonding thickness. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049104(A) 申请公布日期 2009.03.05
申请号 JP20070212307 申请日期 2007.08.16
申请人 TOSHIBA CORP 发明人 WATANABE NAOTAKE
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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