发明名称 POROUS SPIN-ON GLASS COMPOSITION, METHOD OF FORMING THE SAME AND METHOD MANUFACTURING A POROUS SILICON OXIDE LAYER USING THE SAME
摘要 Provided is a porous spin-on glass composition, which forms a porous silicone oxide layer with low dielectric constant to be desired and forms a porous silicon oxide layer with good bonding properties to a lower layer and an upper layer. The porous spin-on glass composition comprises 3-20wt% of silsesquioxane oligomer having a structure of the following formula 1, 3-20wt% of a pore generator, and the balance of solvent. In the formula 1, each of Y1 and Y2 is independently a hydrolyzable alkoxy group, R is a lower alkyl group, and n and m are an integer of 1-9. The alkoxy group is any one selected from the group consisting of methoxide, ethoxide, iso-propoxide, and butoxide.
申请公布号 KR20060130791(A) 申请公布日期 2006.12.20
申请号 KR20050048147 申请日期 2005.06.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, JUN HYUN;CHOI, JUNG SIK;LEE, JUNG HO;KIM, MI AE
分类号 C09D183/05 主分类号 C09D183/05
代理机构 代理人
主权项
地址