发明名称 |
POROUS SPIN-ON GLASS COMPOSITION, METHOD OF FORMING THE SAME AND METHOD MANUFACTURING A POROUS SILICON OXIDE LAYER USING THE SAME |
摘要 |
Provided is a porous spin-on glass composition, which forms a porous silicone oxide layer with low dielectric constant to be desired and forms a porous silicon oxide layer with good bonding properties to a lower layer and an upper layer. The porous spin-on glass composition comprises 3-20wt% of silsesquioxane oligomer having a structure of the following formula 1, 3-20wt% of a pore generator, and the balance of solvent. In the formula 1, each of Y1 and Y2 is independently a hydrolyzable alkoxy group, R is a lower alkyl group, and n and m are an integer of 1-9. The alkoxy group is any one selected from the group consisting of methoxide, ethoxide, iso-propoxide, and butoxide.
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申请公布号 |
KR20060130791(A) |
申请公布日期 |
2006.12.20 |
申请号 |
KR20050048147 |
申请日期 |
2005.06.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, JUN HYUN;CHOI, JUNG SIK;LEE, JUNG HO;KIM, MI AE |
分类号 |
C09D183/05 |
主分类号 |
C09D183/05 |
代理机构 |
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