| 摘要 |
<p>A nonvolatile semiconductor memory comprises a silicon substrate (1), a gate electrode (5) formed through a gate insulator film (3,4) on a principal surface of the semiconductor substrate (1), a pair of source/drain regions (7,8) formed in a principal surface region of the semiconductor substrate to locate the gate electrode (5) between the pair of source/drain regions (7,8). The gate insulator film is formed of a silicon oxide and/or silicon nitride film (3) in contact with the principal surface of the semiconductor substrate, and a lead germanate film (4) which is formed on the silicon oxide and/or silicon nitride film (3) and which is a ferroelectric having a dielectric constant of not larger than 50. <IMAGE></p> |
