COMPOSITION CONTAINING CROSS-LINKABLE MATRIX PRECURSOR AND PORAGEN, AND POROUS MATRIX PREPARED THEREFROM

摘要

PROBLEM TO BE SOLVED: To provide an ultra-low dielectric material that is stable to the severe processing conditions required in fabricating semiconductors.SOLUTION: The invention provides a composition comprising (a) a hydrocarbon-containing matrix precursor and (b) a poragen; wherein the matrix precursor is selected to form upon curing a cross-linked, hydrocarbon-containing material having a Tg of greater than 300°C.