Precursors Of Manganese And Manganese-Based Compounds For Copper Diffusion Barrier Layers And Methods Of Use

摘要

Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

主权项

1. A method of forming a semiconductor device, the method comprising:
providing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having a feature with at least one sidewall; and forming a manganese nitride barrier layer on the dielectric layer, the barrier layer formed using one or more of Mn(t-Bu2N)2 or Mn(TMP)2; and depositing a fill layer over the barrier layer.