| 摘要 |
An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more.
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