发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A conductive oxygen barrier layer is formed on an interlayer dielectric film and patterned such that it is in contact with the top surface of a contact plug to prevent the diffusion of oxygen into the contact plug from above. The conductive oxygen barrier layer is composed of a lower layer containing a conductive nitride such as TiAlN, and an upper layer containing a conductive oxide such as IrO2. An insulative oxygen barrier layer composed of Al2O3 and having a thickness of approximately 20 nm is formed on the side surfaces of the conductive oxygen barrier layer to prevent the diffusion of oxygen into the contact plug from the sides, such as from the sides of the lower layer of the conductive barrier layer.
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申请公布号 |
US2004185653(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20040752668 |
申请日期 |
2004.01.08 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAGANO YOSHIHISA;KUTSUNAI TOSHIE |
分类号 |
H01L27/108;H01L21/02;H01L21/768;H01L21/8242;H01L21/8246;H01L27/105;(IPC1-7):H01L21/476 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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