发明名称 BONDING WIRE
摘要 PROBLEM TO BE SOLVED: To provide a high strong bonding wire which is suitable as a multi-pin semiconductor device. SOLUTION: For the composition of a bonding wire, Ag is set 1-40% by weight (%), Pd is set 0.1-5%, and the residual is set Au and obligatory impurity. It is preferred that Ag be 1-40%, Pd is 0.1-5%, more than one kind of Ca, Sr, Y, La, Ce, Eu, Be, Ge, In, and Sn is 0.0001-0.01%, and the remainder is Au and the unavoidable impurities, or that Ag is 1-40%, Pd is 0.1-5%, more than one kind of Cu, Pt, Ru, Os, Rh, and Ir is 0.1-3%, and the residual part is Au and the unavoidable impurities, or that Ag is 1-40%, Pd is 0.1-5%, more than one kind of Ca, Sr, Y, La, Ce, Eu, Be, Ge, In, and Sn is 0.0001-0.01%, more than one kind of Cu, Pt, Ru, Os, Rh, or Ir are in total 0.1-3%, and the remainder is Au and the unavoidable impurities.
申请公布号 JPH1145899(A) 申请公布日期 1999.02.16
申请号 JP19970199512 申请日期 1997.07.25
申请人 SUMITOMO METAL MINING CO LTD 发明人 SHIMIZU JUICHI;YOSHIDA HIDETO
分类号 C22C5/02;H01B1/02;H01L21/60 主分类号 C22C5/02
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