| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
a first step of forming a first electrode on one main surface side of a semiconductor wafer; a second step of bonding a first film to another main surface side of the semiconductor wafer at a side opposite to the one main surface; a third step of bonding, after the second step, a second film to an outer peripheral portion of the semiconductor wafer by applying pressure to the second film on the semiconductor wafer using a plurality of cylindrical rollers; and a fourth step of forming, after the third step, a plating layer on the first electrode on the one main surface side of the semiconductor wafer by a plating process; wherein a first roller contacting a side surface of the semiconductor wafer through the second film, and second rollers contacting one main surface and another main surface of the semiconductor wafer respectively through the second film, are used as the plurality of rollers; wherein the third step includes: a first bonding step of pressing and bonding the second film to the side surface of the semiconductor wafer with the first roller; and a second bonding step of bonding an end portion of the second film to the main surface of the semiconductor wafer by sandwiching the end portion between the second roller and the semiconductor wafer in a state in which the second film is bonded to the side surface of the semiconductor wafer; and wherein in the second bonding step, the end portion of the second film is sandwiched between the second roller and the semiconductor wafer from a portion of the second film bonded to the side surface of the semiconductor wafer by the first roller. |
