发明名称 NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)
摘要 A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero junction structure for controlling a current flow between the source and drain electrodes in the 2DEG layer. The power device further includes a floating gate located between the gate electrode and hetero junction structure, wherein the gate electrode is insulated from the floating gate with an insulation layer and wherein the floating gate is disposed above and padded with a thin insulation layer from the hetero junction structure and wherein the floating gate is charged for continuously applying a voltage to the 2DEG layer to pinch off the current flowing in the 2DEG layer between the source and drain electrodes whereby the HFET semiconductor power device is a normally off device.
申请公布号 US2016380073(A1) 申请公布日期 2016.12.29
申请号 US201514729396 申请日期 2015.06.03
申请人 Alpha and Omega Semiconductor Incorporated 发明人 Bhalla Anup;Zhu Tinggang
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
主权项 1. (canceled)
地址 Sunnyvale CA US