SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A semiconductor memory device and a method of operating the same are provided. The device includes a memory cell array including a plurality of memory cells is arranged in a plurality of columns, a peripheral circuit configured to program selected memory cells of the memory cells when a program operation is performed, and a control logic configured to control the peripheral circuit during the program operation. The control logic controls the peripheral circuit so that a fail bit masking operation and a most significant bit (MSB) data program operation are performed concurrently during the program operation.

主权项

1. A semiconductor memory device, comprising:
a memory cell array including a plurality of memory cells; a peripheral circuit configured to program a memory cell selected from the memory cells when a program operation is performed; and a control logic configured to control the peripheral circuit during the program operation, wherein the control logic controls the peripheral circuit so that a fail bit masking operation is performed to deactivate a most significant bit (MSB) data program operation with respect to a column that is determined to be failed as a result of a least significant bit (LSB) program operation, among a plurality of columns corresponding to the plurality of memory cells, and controls the peripheral circuit so that an MSB data program operation with respect to the remaining columns except the failed column among the plurality of columns is performed while the fail bit masking operation is performed, during the program operation.