| 摘要 |
PROBLEM TO BE SOLVED: To provide a high dielectric constant material with a small leak current in a high electric field region. SOLUTION: A nonvolatile semiconductor memory device comprises a first conduction-type semiconductor region 11, second conduction-type source-drain regions 12 arranged so as to be separated from each other in the semiconductor region 11, a tunnel insulating film 13 arranged on a channel region between the source-drain regions 12, a floating electrode 14 arranged on the tunnel insulating film 13, an insulating film 15 between electrodes arranged on the floating gate electrode 14, and control gate electrodes 16, 17 arranged on the insulating film 15 between electrodes, wherein the insulating film 15 between electrodes includes a lanthanoid-based metal Ln, aluminum Al, and oxygen O, and the composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and aluminum takes a value in a rage between 0.33 and 0.39. COPYRIGHT: (C)2009,JPO&INPIT
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