发明名称 Multichip module with improved system carrier
摘要 A power semiconductor device has a first chip carrier part (11) and a second chip carrier part (12), the first chip carrier part (11) and the second chip carrier part (12) being spaced apart from one another and being electrically conductive in each case. A first chip with a power transistor is arranged on the first chip carrier part (11) and a second chip (14) is arranged on the second chip carrier part (12). The terminal for a first potential (DC−) of a supply voltage is electrically connected to the first chip (13) via the first chip carrier part and the terminal for the second potential of a supply voltage (DC+) is electrically connected to the second chip (14) via the second chip carrier part.
申请公布号 US8115294(B2) 申请公布日期 2012.02.14
申请号 US20070687346 申请日期 2007.03.16
申请人 OTREMBA RALF;SCHLOEGEL XAVER;INFINEON TECHNOLOGIES AG 发明人 OTREMBA RALF;SCHLOEGEL XAVER
分类号 H01L23/52 主分类号 H01L23/52
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