Semiconductor device with trench epitaxy and contact

摘要

A semiconductor device comprises a semiconductor fin arranged on a substrate, a gate stack arranged over a channel region of the fin, a spacer arranged in contact with sidewalls of the gate stack, a trench partially defined by the spacer, the fin, and a flowable oxide material, an epitaxially grown source/drain region formed on the fin in the trench, and a contact metal arranged on the source/drain region in the trench, the contact metal substantially filling the trench.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a semiconductor fin on a substrate; forming a first gate stack over a first channel region of the fin; depositing a first liner layer on the first gate stack; depositing a semiconductor material on the first liner layer; etching to remove a portion of the semiconductor material to form a first cavity adjacent to the first gate stack; depositing an insulator material in the first cavity; depositing a first cap layer over the insulator material, the semiconductor material, and the first gate stack; etching to remove exposed portions of the first cap layer, the semiconductor material adjacent to the first gate stack to form a second cavity that exposes portions of the fin; and growing a first source/drain region on exposed portions of the fin in the second cavity.