发明名称 |
Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layers |
摘要 |
A method of forming a capacitor includes forming first and second capacitor electrodes over a substrate. A capacitor dielectric region is formed intermediate the first and second capacitor electrodes, and includes forming a silicon nitride comprising layer over the first capacitor electrode. A silicon oxide comprising layer is formed over the silicon nitride comprising layer. The silicon oxide comprising layer is exposed to an activated nitrogen species generated from a nitrogen-containing plasma effective to introduce nitrogen into at least an outermost portion of the silicon oxide comprising layer. Silicon nitride is formed therefrom effective to increase a dielectric constant of the dielectric region from what it was prior to said exposing. Capacitors and methods of forming capacitor dielectric layers are also disclosed.
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申请公布号 |
US2005167727(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050095074 |
申请日期 |
2005.03.30 |
申请人 |
MOORE JOHN T.;DEBOER SCOTT J. |
发明人 |
MOORE JOHN T.;DEBOER SCOTT J. |
分类号 |
H01L21/02;H01L21/314;(IPC1-7):H01L21/824;H01L27/108;H01L29/76 |
主分类号 |
H01L21/02 |
代理机构 |
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主权项 |
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地址 |
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