发明名称 |
Multi-bit magnetic memory with independently programmable free layer domains |
摘要 |
An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a magnetic tunnel junction (MTJ) has a ferromagnetic free layer with multiple magnetic domains that are each independently programmable to predetermined magnetizations. Those magnetizations can then be read as different logical states of the MTJ.
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申请公布号 |
US8279662(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20100944523 |
申请日期 |
2010.11.11 |
申请人 |
LOU XIAOHUA;GAO ZHENG;DIMITROV DIMITAR V.;SEAGATE TECHNOLOGY LLC |
发明人 |
LOU XIAOHUA;GAO ZHENG;DIMITROV DIMITAR V. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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