| 发明名称 |
HIGH THERMAL CONDUCTIVITY SILICON NITRIDE CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25 DEG C. of 60 W/mxK or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same. |
| 申请公布号 |
KR100244822(B1) |
申请公布日期 |
2000.02.15 |
| 申请号 |
KR19960042428 |
申请日期 |
1996.09.25 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUMINO, HIROYASU;HORIGUCHI, AKIHIRO;KASORI, MITSUO;UENO, FUMIO |
| 分类号 |
C04B37/02;C04B35/584;C04B35/593;C04B41/52;C04B41/89;H01L23/14;H01L23/15;H01L23/373;H05K1/03;H05K3/38;(IPC1-7):H01L23/00 |
主分类号 |
C04B37/02 |
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