发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
摘要 |
There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non- simultaneously performing forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber and forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer. |
申请公布号 |
US2016358767(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615170352 |
申请日期 |
2016.06.01 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
NITTA Takafumi;SHIMAMOTO Satoshi;HIROSE Yoshiro |
分类号 |
H01L21/02;C23C16/40;C23C16/509;C23C16/455;H01J37/32;C23C16/52;C23C16/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber; andforming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer. |
地址 |
Tokyo JP |