| 摘要 |
PROBLEM TO BE SOLVED: To provide an ashing method and an ashing device for preventing the occurrence of popping while removing the fragments of a flown altered layer when the popping occurs. SOLUTION: The ashing method is provided for removing resist having the altered layer 4 formed on the surface with ion implantation and a non-altered layer 3 formed on the lower side thereof. Herein, an applied film 5 is formed to cover the face of a substrate on which the resist is formed, and the resist and the applied film 5 are removed therefrom with plasma treatment using reactive gas. COPYRIGHT: (C)2009,JPO&INPIT
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