SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH REDUCED BIT CELL SIZE

摘要

PROBLEM TO BE SOLVED: To reduce memory cell size of spin transfer torque magnetoresistive random access memory (STT-MRAM).

SOLUTION: A reduced bit cell size is achieved by arranging source lines SL substantially in parallel with word lines WL and substantially perpendicular to bit lines BL. Further, in one embodiment, during a write operation, a high logic/voltage level is applied to the bit lines of unselected bit cells to prevent an invalid write operation.

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