发明名称 |
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN FORMING METHOD |
摘要 |
A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1. |
申请公布号 |
EP2899593(A4) |
申请公布日期 |
2016.06.22 |
申请号 |
EP20130835872 |
申请日期 |
2013.09.06 |
申请人 |
JSR CORPORATION |
发明人 |
TOYOKAWA FUMIHIRO;NAKAFUJI SHIN-YA;WAKAMATSU GOUJI |
分类号 |
G03F7/11;C08G8/04;C08G8/20;C08L61/06;G03F7/09;G03F7/26 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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