| 发明名称 |
COPPER ALLOY FOR ELECTRONIC AND ELECTRICAL EQUIPMENT, PLASTICALLY WORKED COPPER ALLOY MATERIAL FOR ELECTRONIC AND ELECTRICAL EQUIPMENT, AND COMPONENT AND TERMINAL FOR ELECTRONIC AND ELECTRICAL EQUIPMENT |
| 摘要 |
The present invention provides a copper alloy for electronic and electronic device which has excellent mechanical properties and is capable of suppressing generation of defects even in a case in which the copper alloy is worked to a thin plate thickness or a smaller wire diameter than in the related art, a plastically-worked copper alloy material, and a component and a terminal for electronic and electronic device. The copper alloy for electronic and electronic device of the present invention includes Mg in a range of 1.3 mass % to 2.8 mass % with a remainder substantially being Cu and inevitable impurities, in which a content of H is set to 10 mass ppm or lower, a content of O is set to 100 mass ppm or lower, a content of S is set to 50 mass ppm or lower, and a content of C is set to 10 mass ppm or lower. |
| 申请公布号 |
US2016160321(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201414907193 |
申请日期 |
2014.07.29 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
ITO Yuki;MAKI Kazunari |
| 分类号 |
C22C9/00;H01R13/03;C21D9/00;C23C30/00;C22F1/08;C21D8/00 |
主分类号 |
C22C9/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A copper alloy for electronic and electrical devices, comprising:
Mg in a range of 1.3 mass % to 2.8 mass %; and a remainder substantially being Cu and inevitable impurities, wherein a content of H is set to 10 mass ppm or lower, a content of O is set to 100 mass ppm or lower, a content of S is set to 50 mass ppm or lower, and a content of C is set to 10 mass ppm or lower. |
| 地址 |
Tokyo JP |
