SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT

摘要

A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a semiconductor body. A first electrode on the top side of the semiconductor body is electrically connected to a first zone near the surface of the semiconductor body. A second electrode is electrically connected to a second zone of the semiconductor body. Furthermore, the semiconductor body has a drift path region, which is arranged in the semiconductor body between the first electrode and the second electrode. A cell region of the semiconductor component is subdivided into a main cell region and an auxiliary cell region, wherein the breakdown voltage of the auxiliary cells is greater than the breakdown voltage of the main cells.

主权项

1. A method for producing semiconductor components having a drift path and main cell region and auxiliary cell region, wherein the properties of the drift path with regard to the breakdown voltage in the main cell region differ from the properties of the drift path in the auxiliary cell region, the method comprising:
patterning a semiconductor wafer composed of a monocrystalline semiconductor body with semiconductor component structures in semiconductor chip positions which have diode, MOSFET or IGBT structures with a lateral or vertical drift path for the main cell region and the auxiliary cell region; introducing vertical trench structures into the drift path in the auxiliary cell region; depositing an insulating layer on the trench walls of the trench structures; and filling the trench structures with a conductive material to form field plates.