发明名称 Semiconductor device featuring electrode terminals forming superior heat-radiation system
摘要 In a semiconductor device including a semiconductor chip featuring opposite first and second principal faces, and side faces extending therebetween, a first electrode layer is formed on the first principal face, and a second electrode layer is formed on the second principal face. A first metal electrode terminal is electrically adhered to the first electrode layer so that a part of the first metal electrode terminal protrudes out of one of the side faces, and a second metal electrode terminal is electrically adhered to the second electrode layer so that a part of the second metal electrode terminal protrudes out of the one of the side faces of the semiconductor chip. The parts of the first and second metal electrode terminals have respective soldering faces which are perpendicular to the first and second principal faces, and are coplanar with each other.
申请公布号 US2007096317(A1) 申请公布日期 2007.05.03
申请号 US20060588347 申请日期 2006.10.27
申请人 NEC ELECTRONICS CORPORATION 发明人 KIYOHARA TOSHINORI
分类号 H01L23/48;H01L21/44;H01L23/52;H01L29/40 主分类号 H01L23/48
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