IMAGE SENSOR WITH IMPROVED DARK CURRENT PERFORMANCE

摘要

A semiconductor image sensor device is provided. An image sensor device includes a semiconductor substrate which has a first surface and a second surface facing the first surface. The semiconductor substrate includes a light irradiation detection region for detecting light radiated from the second surface to the substrate. A first layer is arranged on the second surface of the semiconductor substrate. The first layer has a first energy band gap. A second layer is arranged on the first layer. The second layer has a second energy band gap. A third layer is arranged on the second layer. The third layer has a third energy band gap. The second energy band gap is less than the first energy band gap and the second energy band gap.