发明名称 A TEST PATTERN OF A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PURPOSE: A test pattern of a semiconductor device and method for manufacturing the same are provided to detect a contact bridge by using a first contact and a second contact. CONSTITUTION: In a test pattern of a semiconductor device and method for manufacturing the same. A plurality of active areas(102A~102C) are parallel with a semiconductor substrate. A plurality of gate lines are formed on the semiconductor substrate in a plurality of active areas into a perpendicular direction. A plurality of contacts(108A) are formed on a plurality of active areas between a plurality of gate lines. A first dummy contact(108B) is formed in an upper part of odd-numbered active areas. The second dummy contact(108C) is formed in a lower part of even-numbered active area.</p>
申请公布号 KR20100013977(A) 申请公布日期 2010.02.10
申请号 KR20080075741 申请日期 2008.08.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 EOM, JAE DOO
分类号 H01L21/027;H01L21/28;H01L21/336 主分类号 H01L21/027
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