发明名称 |
A TEST PATTERN OF A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A test pattern of a semiconductor device and method for manufacturing the same are provided to detect a contact bridge by using a first contact and a second contact. CONSTITUTION: In a test pattern of a semiconductor device and method for manufacturing the same. A plurality of active areas(102A~102C) are parallel with a semiconductor substrate. A plurality of gate lines are formed on the semiconductor substrate in a plurality of active areas into a perpendicular direction. A plurality of contacts(108A) are formed on a plurality of active areas between a plurality of gate lines. A first dummy contact(108B) is formed in an upper part of odd-numbered active areas. The second dummy contact(108C) is formed in a lower part of even-numbered active area.</p> |
申请公布号 |
KR20100013977(A) |
申请公布日期 |
2010.02.10 |
申请号 |
KR20080075741 |
申请日期 |
2008.08.01 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
EOM, JAE DOO |
分类号 |
H01L21/027;H01L21/28;H01L21/336 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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