发明名称 |
Method for fabricating and BEOL interconnect structures with simultaneous formation of high-k and low-k dielectric regions |
摘要 |
A method for fabricating and back-end-of-line (BEOL) metalization structures includes simultaneous high-k and low-k dielectric regions. An interconnect structure includes a first inter-level dielectric (ILD) layer and a second ILD layer with the first ILD layer underlying the second ILD layer. A plurality of columnar air gaps is formed in the first ILD. The columnar air gap structure is created using a two-phase photoresist material for providing different etching selectivity during subsequent processing.
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申请公布号 |
US2007096319(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050266741 |
申请日期 |
2005.11.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;MANDELMAN JACK A.;TONTI WILLIAM;YANG CHIH-CHAO |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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