DRAM MEMORY CELL AND FABRICATING METHOD THEREOF TO EXTEND SIZE OF STORAGE NODE ELECTRODE

摘要

PURPOSE: A DRAM memory cell and a fabricating method thereof are provided to extend a size of a storage node electrode without a short circuit between storage node electrodes by improving a structure of the DRAM memory cell. CONSTITUTION: A plurality of active regions are formed on a semiconductor substrate. A plurality of word line structures are formed on the semiconductor substrate. The first and the second contact pads are formed on the active regions of both sides of the word line structures. A bit line structure(150) is electrically connected to the first contact pad. An interlayer dielectric(85) is formed on the semiconductor substrate including the bit line structure. A storage node contact plug(80) is connected to the second contact pad through the interlayer dielectric. A storage node electrode(90) is formed on the storage node contact plug.