| 发明名称 |
Plasma Generation and Control Using a DC Ring |
| 摘要 |
The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system. |
| 申请公布号 |
US2016300738(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201615093031 |
申请日期 |
2016.04.07 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Zhao Jianping;Chen Lee;Lane Barton G.;Funk Merritt;Sundararajan Radha |
| 分类号 |
H01L21/67;H01J37/32 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Surface Wave Plasma (SWP) processing system for processing a substrate comprising:
a process chamber comprising a process space having a substrate holder therein; a Surface Wave Plasma (SWP) source coupled to the process chamber, wherein the SWP plasma source comprises a slot antenna and a resonator plate coupled to the slot antenna; an electromagnetic (EM) source coupled to the SWP source; a Direct Current (DC) ring subsystem coupled through a chamber wall and configured to surround the process space; a power subsystem coupled to the DC ring subsystem; and a controller configured to control the SWP source, the EM source, the DC ring subsystem, and the power subsystem, thereby controlling plasma uniformity in the process space. |
| 地址 |
Tokyo JP |
