| 发明名称 |
Method for Processing a Semiconductor Surface |
| 摘要 |
A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber. |
| 申请公布号 |
US2016211140(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201614997221 |
申请日期 |
2016.01.15 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Konrath Jens Peter;Kern Ronny;Krivec Stefan;Schmid Ulrich;Stoeber Laura |
| 分类号 |
H01L21/285;H01L21/265;H01L29/47 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a semiconductor surface, the method comprising:
irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface; and implanting ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface, wherein the irradiating and the implanting are performed within a same chamber. |
| 地址 |
Neubiberg DE |
