| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM |
| 摘要 |
A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate. |
| 申请公布号 |
US2016196978(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201615067467 |
申请日期 |
2016.03.11 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KAGA Yukinao;OGAWA Arito |
| 分类号 |
H01L21/28;C23C16/52;C23C16/32;C23C16/455 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing: supplying a first precursor gas containing the first metal element and not containing carbon to the substrate; supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate; and supplying a reaction gas containing carbon to the substrate. |
| 地址 |
Tokyo JP |
