发明名称 |
Flip-chip type nitride semiconductor light emitting diode |
摘要 |
Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.
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申请公布号 |
US2006192206(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20050150288 |
申请日期 |
2005.06.13 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KONG MOON H.;KIM YONG C.;LEE JAE H.;BACK HYUNG K. |
分类号 |
H01L33/06;H01L33/32;H01L33/38;H01L33/40;H01L33/62 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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