摘要 |
<p>A field emission device comprises a substrate (12, 41, 51) having first and second portions, and a cathode metal layer (20, 44, 52) in the first portion to partially define a sidewall (23) for a trench (25) in the second portion. A ballast layer (22, 46, 53) is formed over the second portion, the cathode metal layer (20, 44, 52), and the sidewall (23). A first dielectric layer (24, 47, 54) is formed over the ballast layer (22, 46, 53). A gate extraction metal layer (26, 48, 55) is formed over the first dielectric layer. At emitter (30) comprising a high aspect ratio conductive material is formed above the substrate). An anode (32) is positioned to receive electrons from the emitter (30).</p> |
申请人 |
MOTOROLA, INC.;HOWARD, EMMETT, M.;DEAN, KENNETH, A.;JOHNSON, MICHAEL, R. |
发明人 |
HOWARD, EMMETT, M.;DEAN, KENNETH, A.;JOHNSON, MICHAEL, R. |