| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment device capable performing the feeding/shielding of treatment gas at a high speed. SOLUTION: A first buffer chamber 50 in which a raw material feed point 76 is arranged, second buffer chambers 56a and 56b in which many pores 72 are formed, and a third buffer chamber 60 in which many pores 74 are formed, are formed on a first dispersion plate 26. The feeding place of a gaseous starting material charged inside the first buffer chamber 50 is switched to the second buffer chambers 56a and 56b or the third buffer chamber 60 by purge gas introduced into block points 80a, 80b, 82a, 82b, 84a and 84b. COPYRIGHT: (C)2005,JPO&NCIPI
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