发明名称 BIDIRECTIONAL MOSFET SWITCH AND MULTIPLEXER
摘要 A bidirectional MOSFET switch is provided. The switch includes an input terminal, an output terminal and two MOSFET transistors which are connected to one another by their source and gate terminals. The input and the output terminals are connected to a respective drain terminal of the two MOSFET transistors. The switch further includes a control input terminal that is galvanically isolated by a potential isolator and connected to a control unit configured to switch a control current for a FET transistor via a further MOSFET transistor. The FET transistor is configured to generate, by the control current, a gate voltage Vgs between the gate and the source at the two MOSFET transistors for the switching thereof, and a floating voltage source, which is galvanically connected to the input and which is configured to generate a gate control current for the two MOSFET transistors.
申请公布号 US2016365854(A1) 申请公布日期 2016.12.15
申请号 US201615179502 申请日期 2016.06.10
申请人 WEETECH GmbH 发明人 Hengl Rudi;Reuter Christian
分类号 H03K17/693 主分类号 H03K17/693
代理机构 代理人
主权项 1. A bidirectional MOSFET switch comprising: a first MOSFET transistor having a first source terminal, a first gate terminal and a first drain terminal; a second MOSFET transistor having a second source terminal, a second gate terminal and a second drain terminal; said first and second MOSFET transistors being connected to one another via said first and second source terminals and via said first and second gate terminals; an input terminal connected to said first drain terminal of said first MOSFET transistor; an output terminal connected to said second drain terminal of said second MOSFET transistor; a control unit; a potential isolator; a control input terminal connected to said control unit via said potential isolator; said potential isolator being configured to galvanically isolate said control input terminal from said control unit; a third FET transistor configured to generate, depending on a control current, a gate voltage Vgs between said first and second gate terminals and said first and second source terminals to switch said first and second MOSFET transistors; a fourth MOSFET transistor; said control unit being configured to switch the control current for said third FET transistor via said fourth MOSFET transistor; and, a floating voltage source galvanically connected to said input terminal and configured to generate a gate control current for said first and second MOSFET transistors.
地址 Wertheim DE