| 摘要 |
<p>Disclosed are a semiconductor device and a method for manufacturing same. The semiconductor device according to one embodiment of the present invention comprises: a conductive support layer; a first semiconductor layer of a first type formed on the conductive support layer; a second semiconductor layer of a second type; an active layer interposed between the first semiconductor layer and the second semiconductor layer; and at least one barrier layer, which is a buffer for thermal expansion stress, formed into a predetermined shape pattern either on or inside the conductive support layer so as to minimize the thermal expansion stress between the conductive support layer and the first semiconductor layer. The barrier layer, which is a buffer for thermal expansion stress, includes a first barrier layer, which is a buffer for thermal expansion stress, having a first shape pattern which is patterned into a predetermined shape, or a second barrier layer, which is a buffer for thermal expansion stress, having a second shape pattern. The barrier layer, which is a buffer for thermal expansion stress, is configured such that at least one first barrier layer, which is a buffer for thermal expansion stress, and at least one second barrier layer, which is a buffer for thermal expansion stress, are spaced apart from each other or formed into a continuous double layer. Thus, in the semiconductor device having a vertical structure, stresses which may be caused due to the difference of thermal expansion coefficients between a light-emitting structure and the conductive support layer during package assembly and application of current can be minimized.</p> |
