| 摘要 |
PURPOSE:To improve the electron mobility of a hetero-junction HEMT by a method wherein a channel layer is formed of indium gallium arsenide, and a supply layer for bi-dimensional electron gas is formed of indium phosphide. CONSTITUTION:Using a molecular beam epitaxial growing method, a single crystal layer composed of InxGa1-xAs (x=0.57-0.65) which does not contain impurities is grown on an InP substrate 1, which is decided as the channel layer 2. A single crystal layer composed of InP which contains tin the impurity having n type conductivity is grown on this channel layer 2, which is decided as the supply layer 3 for bi-dimensional electron gas. Next, the alloy metal of Au and Si is adhered on the gas supply layer 3 into a source electrode 6 and a drain electrode 7. Then, Au is evaporated at the center of the gas supply layer 3 resulting in the formation of a Schottky contact, which is decided as a gate electrode 5. |
