| 摘要 |
PURPOSE:To reduce the dark attenuation rate of an amorphous silicon-base recording body and to improve the sensitivity, etc., by forming a blocking layer of amorphous silicon carbide and a surfae modifying layer of an inorg. substance. CONSTITUTION:A substrate 1 is coated with a blocking layer 5 of amorphous silicon carbide-hydride and/or -fluoride contg. an impurity capable of providing a prescribed type of electric conductivity such as phosphours or boron at a high concn. The layer 5 is coated with a charge retentive layer 2 of amorphous silicon carbide-hydride and/or -fluoride. The layer 2 is coated with a photoconductive layer 3 of amorphous silicon hydride and/or fluoride, and the layer 3 is further coated with a surface modifying layer 4 of an inorg. substance such as SiO, SiO2, A2O3 or Ta2O5 to obtain the desired recording body. |
