发明名称 METHOD OF PRODUCING SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor device in which a photosensitive lacquer layer is developed in a lye solution, and comprises a polymeric material and a sensitizer with a diazo group and a ketone group. This lacquer layer is formed on a substrate surface. After a patterning irradiation, but before development, the lacquer layer is subjected to an intermediate treatment comprising two irradiations. These irradiations result in that differences in solubility in lye are obtained in the direction of thickness in the parts of the lacquer layer which were not exposed during the patterning irradiation. In this manner, it is possible to realize lacquer patterns with different profiles.
申请公布号 JPS5965432(A) 申请公布日期 1984.04.13
申请号 JP19830164282 申请日期 1983.09.08
申请人 PHILIPS' GLOEILAMPENFABRIEKEN NV 发明人 FURANSHISUKASU ANTONIUSU FUORENBUROTSUKU;ERIZABESU YAKOBA SUPIERUTSU
分类号 G03F7/26;G03F7/022;G03F7/20;H01L21/027;H01L21/306 主分类号 G03F7/26
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