发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device in which a photosensitive lacquer layer is developed in a lye solution, and comprises a polymeric material and a sensitizer with a diazo group and a ketone group. This lacquer layer is formed on a substrate surface. After a patterning irradiation, but before development, the lacquer layer is subjected to an intermediate treatment comprising two irradiations. These irradiations result in that differences in solubility in lye are obtained in the direction of thickness in the parts of the lacquer layer which were not exposed during the patterning irradiation. In this manner, it is possible to realize lacquer patterns with different profiles. |
申请公布号 |
JPS5965432(A) |
申请公布日期 |
1984.04.13 |
申请号 |
JP19830164282 |
申请日期 |
1983.09.08 |
申请人 |
PHILIPS' GLOEILAMPENFABRIEKEN NV |
发明人 |
FURANSHISUKASU ANTONIUSU FUORENBUROTSUKU;ERIZABESU YAKOBA SUPIERUTSU |
分类号 |
G03F7/26;G03F7/022;G03F7/20;H01L21/027;H01L21/306 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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