| 摘要 |
PURPOSE:To change the intensity of output light independently of each optical shutter in stages and to obtain an optical shutter array of high quality by controlling the intensity of the output light in accordance with the number of electrodes impressing voltages in upper plural electrodes formed on each optical shutter. CONSTITUTION:Platinum 12 is epitaxially grown on a sapphire C-face substrate 11 with about 5,000Angstrom thickness by sputtering method. While heating the substrate 11 at 600-700 deg.C, a thin film 13 of PLZT having electrooptic effect is epitaxially grown with about 5mum by a high frequency magnetron sputtering device by using PLZT9/65/35 component powder containing PbO excessive only by several wt% as a target. The thin film part to be an optical shutter is left and the other thin film part is removed. Aluminum electrodes 14 are evaporated on the left part to be the optical shutter to form upper five electrodes to be independently operated for each optical shutter. Thus, the produced element can be acted as am optical shutter array under a prescribed arrangement.
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