发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To attain a reading even when the same address is changed for a short time by detecting the transition of an address and resetting a preamplifier activating signal generating circuit and a resetting signal generating circuit while a first fine single pulse is generated. CONSTITUTION:When an address Ai is transited and the output ATD of an address transition detecting circuit 100 goes to a high level, a column decoder activating signal, the inverse of ATD' goes to a low level and bit line pair data are transferred through a selecting column decoder to an I/O line pair. Thereafter, when a signal ATD goes to a low level, a signal ATDD goes to a high level, further, a preamplifying activating signal PAE' goes to the high level and a resetting signal CDC goes to the high level by the delaying from the signal PAE'. When the same address is changed within a short time again, the output ATD goes to the high level again and a preamplifying activating signal generating circuit 200b and a resetting signal generating circuit 200c are reset. Thereafter, the low level of the signal ATD is detected, and thus, reading can be executed normally.
申请公布号 JPS63138596(A) 申请公布日期 1988.06.10
申请号 JP19860284849 申请日期 1986.11.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIYATAKE HIDEJI;KUMANOTANI MASAKI;HIDAKA HIDETO;KONISHI YASUHIRO;DOSAKA KATSUMI;YAMAZAKI HIROYUKI;SHIMODA MASAKI;IKEDA ISATO;TSUKAMOTO KAZUHIRO
分类号 G11C11/401;G11C7/22;G11C8/18 主分类号 G11C11/401
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