| 摘要 |
<p>PURPOSE:To nullify contact holes likely generated at the time of cross-over by covering the terminal region with a metal mask, and putting thereover an insulative film and an amorphous Si film. CONSTITUTION:Extra pinholes 10 are produced greater than pinholes 9 in a SiNX film 7 by the over-etching process, and the surface of a glass base board 1 is exposed. An amorphous Si film 11 and a N type amorphous Si film 12 are put over that region on SiNX film 7 which mates with TFT. On the Si film 12 a Cr film 15 is put for the purpose of adhering with a source electrode 13 and a drain electrode 14. To take out signals from the source and drain of the amorphous Si film 11, the channel regions of the N type amorphous Si film 12 and Cr film 15 are removed by means of etching. As a result, the electroconductive material to be put on the surface of glass base board 1 is free from contacting the gate 2 and aux. capacitance electrode 3.</p> |
