| 摘要 |
PROBLEM TO BE SOLVED: To make an equipment for continuously manufacturing semiconductor device compact by improving a gas gate and, at the same time, to improve the productivity of the equipment by securing a suitable pressure for film formation by preventing the mixing of gases with each other and the diffusion of the gasses to adjacent, film forming chambers. SOLUTION: An equipment for continuously manufacturing semiconductor device continuously manufactures semiconductor devices on a belt-like substrate 101 by continuously carrying the substrate 101 in the length direction through a plurality of film forming chambers which are set at different film forming pressures and connected to each other through gas gates having slit-like separating passages. The internal surfaces of the openings of the gas gates connecting the film forming chambers to each other are formed so that the cross sections of the openings can become smaller as going toward the exits of the gates from the entrance sides in steps or continuously in the carrying direction of the substrate 101, namely, the length direction of the substrate 101. At the same time, the blowing ports of a separation gas made to flow to the gas gates are provided on the film forming chamber set at the highest film forming pressure. |
