SEMICONDUCTOR DEVICE HAVING GATE-ALL-AROUND TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a gate-all-around transistor is provided to be effective to widen the channel width of a transistor by making it a three dimensional structure and reduce the possibility of crystal damage in the channel. CONSTITUTION: A silicon on chip substrate is prepared, containing a silicon-germanium layer(30), a silicon layer(40), an oxide layer(20), a bottom substrate layer(10). The silicon-germanium layer and silicon layer are patterned as an active layer and a thermal insulation barrier is formed on it temporarily. An etch barrier pattern is dressed and then the thermal insulation barrier is removed by etching such as wet etching and then a channel-insulation barrier is formed on the exposed surface of the active layer. A conducting material layer formed on the etch barrier pattern defining the gate region is removed by CMP method so that the etch barrier is exposed and then removed by wet etching over the whole substrate. Therefore, A gate-all-around transistor is formed as the active layer is surrounded by gate electrode(82).