| 摘要 |
Disclosed are a transparent PN junction element and an electronic apparatus using the same. The PN junction element comprises: a support substrate, a copper chloride (CuCl) thin film layer, a transparent electrode layer, and first and second electrodes. The copper chloride thin film layer is formed on the support substrate, and functions as a P-type semiconductor layer. The transparent electrode layer is formed on a partial region of the copper chloride thin film layer, and functions as an N-type semiconductor layer. The first electrode is formed on a partial region of the copper chloride thin film layer, which is not covered with the transparent electrode layer. The second electrode is formed on the transparent electrode layer. Furthermore, the transparent electrode layer may comprise Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). |
