发明名称 |
LEVEL SHIFTING CIRCUIT |
摘要 |
A level shifting circuit includes a level shifting portion configured to receive an input signal and generate an output signal, and a current adjustment circuit connected between the level shifting portion and a drive high voltage node at which a drive high voltage is applied. The current adjustment circuit is configured to adjust an amount of current provided from the drive high voltage node to the level shifting portion. |
申请公布号 |
US2017117898(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201615285348 |
申请日期 |
2016.10.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Lee Dalhee;Kim Jintae;Lee Jaeha |
分类号 |
H03K19/0185 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
1. A level shifting circuit, comprising:
a level shifting portion configured to receive an input signal and generate an output signal; and a current adjustment circuit connected between the level shifting portion and a drive high voltage node at which a drive high voltage is applied, and configured to adjust an amount of a current provided from the drive high voltage node to the level shifting portion, wherein the current adjustment circuit comprises: a first current adjustment transistor connected between the drive high voltage node and the level shifting portion, and configured to adjust a first current to be provided to a first node of the level shifting portion; and a second current adjustment transistor connected between the drive high voltage node and the level shifting portion, and configured to adjust a second current to be provided to a second node of the level shifting portion, wherein the first and second current adjustment transistors are turned on regardless of the input signal. |
地址 |
Suwon-si KR |