Systems and methods for semiconductor device process determination using reflectivity measurement

摘要

Methods and systems that include receiving a plurality of reflectivity measurements on a semiconductor wafer. A reflectivity map is generated based on the received plurality of reflectivity measurements. The generated reflectivity map is used to determine a process parameter of an epitaxial growth process using the reflectivity map. In an embodiment, the process parameter is a power setting (heating) of a lamp of a CVD epitaxy tool.

主权项

1. A method, comprising:
receiving a plurality of reflectivity amounts associated with a semiconductor wafer; determining a spatial distance for a selected reflectivity change using the plurality of reflectivity amounts, wherein the spatial distance defines a distance across the semiconductor wafer within which the selected reflectivity change occurs; generating a reflectivity map based on the plurality of reflectivity measurements; and using the generated reflectivity map to determine a process parameter of an epitaxial growth process.