| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shift mask, which can form a semiconductor element pattern, in which a fine line width having improved resolution is achieved, by having double shading film patterns so formed that layers are separated from and made to cross each other in the horizontal direction, and a method for manufacturing the mask. SOLUTION: A phase shift mask includes a first shading film pattern 115a formed on a photomask substrate 110 in such a way that a part of the photomask substrate 110 is exposed. A shifter layer pattern 120a is provided over a part of the first shading film pattern 115a and over a part of the upper surface of the substrate 110 exposed by the first shading film pattern 115a. A second shading film pattern 125a spaced by a certain interval from the first shading film pattern 115a in the horizontal direction and so formed to expose a part of the upper surface of the substrate 110 exposed by the first shading film pattern 115a is provided at one end over the shifter layer pattern 120a.</p> |
