发明名称 |
Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
摘要 |
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality. |
申请公布号 |
AU2002328130(A2) |
申请公布日期 |
2002.12.23 |
申请号 |
AU20020328130 |
申请日期 |
2002.05.17 |
申请人 |
NICHIA CORPORATION;AMONO LTD |
发明人 |
ROBERT, TOMASZ DWILINSKI;ROMAN, MAREK DORADZINSKI;LESZEK, PIOTR SIERZPUTOWSKI;JERZY GARCZYNSKI;YASUO KANBARA |
分类号 |
C01G15/00;C30B7/00;C30B7/10;C30B9/00;C30B9/10;C30B29/38;H01L33/00;H01S5/028;H01S5/323;(IPC1-7):C30B7/10 |
主分类号 |
C01G15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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